2N2218 2N2218a silicon npn transistors description: the central semiconductor 2N2218 and 2N2218a are silicon npn transistors manufactured by the epitaxial planar process, and designed for small signal general purpose and switching applications. marking: full part number maximum ratings: (t a =25c unless otherwise noted) symbol 2N2218 2N2218a units collector-base voltage v cbo 60 75 v collector-emitter voltage v ceo 30 40 v emitter-base voltage v ebo 5.0 6.0 v continuous collector current i c 800 ma power dissipation p d 800 mw power dissipation (t c =25c) p d 3.0 w operating and storage junction temperature t j , t stg -65 to +200 c electrical characteristics: (t a =25c) 2N2218 2N2218a symbol test conditions min max min max units i cbo v cb =50v - 10 - - na i cbo v cb =60v - - - 10 na i cev v ce =60v, v eb =3.0v - - - 10 na i ebo v eb =3.0v - 10 - 10 na bv cbo i c =10a 60 - 75 - v bv ceo i c =10ma 30 - 40 - v bv ebo i e =10a 5.0 - 6.0 - v v ce(sat) i c =150ma, i b =15ma - 0.4 - 0.3 v v ce(sat) i c =500ma, i b =50ma - 1.6 - 1.0 v v be(sat) i c =150ma, i b =15ma - 1.3 - 1.2 v v be(sat) i c =500ma, i b =50ma - 2.6 - 2.0 v h fe v ce =10v, i c =100a 20 - 20 - h fe v ce =10v, i c =1.0ma 25 - 25 - h fe v ce =10v, i c =10ma 35 - 35 - h fe v ce =10v, i c =150ma 40 120 40 120 h fe v ce =1.0v, i c =150ma 20 - 20 - h fe v ce =10v, i c =500ma 20 - - - h fe v ce =10v, i c =500ma - - 25 - to-39 case r1 (31-july 2013) www.centralsemi.com
2N2218 2N2218a silicon npn transistors to-39 case - mechanical outline lead code: 1) emitter 2) base 3) collector marking: full part number electrical characteristics - continued: (t a =25c) 2N2218 2N2218a symbol test conditions min max min max units f t v ce =20v, i c =20ma 250 - 250 - mhz c ob v cb =10v, f=100khz - 8.0 - 8.0 pf t on v cc =30v, i c =150ma, i b =15ma - 35 - 35 ns t off v cc =30v, i c =150ma, i b1 =i b2 =15ma - 285 - 285 ns www.centralsemi.com r1 (31-july 2013)
2N2218 2N2218a silicon npn transistors r1 (31-july 2013) www.centralsemi.com typical electrical characteristics
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